NTD4805N, NVD4805N
TYPICAL PERFORMANCE CURVES
110
100
90
80
70
10 V
5V
4.5 V
6V
4V
3.8 V
3.6 V
180
160
140
120
V DS ? 10 V
60
100
50
3.4 V
80
40
30
20
10
0
0
1
2
3
4
3.2 V
3V
2.8 V
5
60
40
20
0
0
1
T J = 125 ? C
T J = 25 ? C
2 3
T J = ? 55 ? C
4
5
6
0.045
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.01
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.040
0.035
0.030
0.025
0.020
0.015
I D = 30 A
T J = 25 ? C
0.009
0.008
0.007
0.006
0.005
0.004
0.003
T J = 25 ? C
V GS = 4.5 V
V GS = 11.5 V
0.010
0.005
0.002
0.001
0
3
4
5
6
7
8
9
10
0
30 35 40
45
50 55 60
65 70 75
80
85 90
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2.0
I D = 30 A
V GS = 10 V
100,000
V GS = 0 V
T J = 175 ? C
10,000
1.5
1.0
1000
100
T J = 125 ? C
0.5
? 50 ? 25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ? C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Drain Voltage
相关PDF资料
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相关代理商/技术参数
NTD4805N-35G 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4805NT4G 功能描述:MOSFET NFET 30V 88A 5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
NTD4806N-1G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806N-1H 制造商:ON Semiconductor 功能描述:
NTD4806N-35G 功能描述:MOSFET NFET 30V 76A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806NA-1G 功能描述:MOSFET NFET DPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4806NA-35G 功能描述:MOSFET NFET IPAK 30V 76A 6mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube